Intel and Micron proclaim their jointly-developed 3D XPoint (pronounced "3D crosspoint") non-volatile memory technology which delivers speeds up to 1,000 times faster than NAND flash (also non-volatile), and is 10x denser than DRAM (much faster than NAND, but volatile and less dense).

The NAND JV partners declare 3D XPoint "significantly reduces latencies, allowing much more data to be stored close to the processor and accessed at speeds previously impossible for non-volatile storage." Unique materials and a cross point array structure are said to make 3D XPoint possible.

What is 3D XPoint?
The explosion of connected devices and digital services is generating massive amounts of new data. For this data to be useful, it must be stored and analysed very quickly. 3D XPoint™ technology is an entirely new class of non-volatile memory that can help turn immense amounts of data into valuable information in real time. With up to 1,000 times lower latency and exponentially greater endurance than NAND, 3D XPoint technology can deliver game-changing performance for big data applications. Its ability to enable high-speed, high-capacity data storage close to the processor creates new possibilities for system architects and promises to enable entirely new applications.

3D XPoint Architecture
The 3D XPoint innovative, transistor-less cross point architecture creates a three-dimensional checkerboard where memory cells sit at the intersection of words lines and bit lines, allowing the cells to be addressed individually. As a result, data can be written and read in small sizes, leading to fast and efficient read/write processes.  

3D XPoint Innovations

Cross Point Array Structure
Perpendicular conductors connect 128 billion densely packed memory cells. Each memory cell stores a single bit of data. This compact structure results in high performance and high density.  

Stackable
The initial technology stores 128Gb per die across two stacked memory layers. Future generations of this technology can increase the number of memory layers and/or use traditional lithographic pitch scaling to increase die capacity.

Selector
Memory cells are accessed and written or read by varying the amount of voltage sent to each selector. This eliminates the need for transistors, increasing capacity and reducing cost.

Fast Switching Cell
With a small cell size, fast switching selector, low-latency cross point array, and fast write algorithm, the cell is able to switch states faster than any existing non-volatile memory technologies today.

Syntech Overview
Syntech was established in 2002. Our product ranges are sourced from a variety of international manufacturers. We distribute a number of top brands and distribute an extensive range of computer related products throughout sub-Saharan Africa. Our objective is to create solutions. We have developed our product range by offering complete solutions with several focused products that cater for individual reseller requirements. Our long-standing relationships with our suppliers ensure that we provide products which have been developed in accordance with market demands. Our distribution-orientated business structure and advanced logistics system ensures that all our clients can expect and be assured of cost effective solutions being delivered on time.

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